Type of RAM | |
Developer | JEDEC |
---|---|
Type | Synchronous dynamic random-access memory |
Generation | 7th generation |
Predecessor | GDDR6 SDRAM |
Graphics Double Data Rate 7 Synchronous Dynamic Random-Access Memory (GDDR7 SDRAM) is a type of synchronous graphics random-access memory (SGRAM) specified by the JEDEC Semiconductor Memory Standard, with a high bandwidth, " double data rate" interface, designed for use in graphics cards, game consoles, and high-performance computing. It is a type of GDDR SDRAM (graphics DDR SDRAM), and is the successor to GDDR6.
GDDR7 SDRAM introduced PAM-3 signaling (3 level pulse-amplitude modulation) instead of NRZ. PAM-3 is 20% more energy-efficient than NRZ with a higher bandwidth and has lower equipment requirements than PAM-4, making it cheaper. PAM-3 is using 1.58 bits per cycle, while NRZ uses only 1 bit per cycle. [9] GDDR7 SDRAM also will be manufactured using 1ß node (equivalent to 12–10 nm process node), which will be the last DRAM production process that will rely on deep ultraviolet (DUV) lithography tools.
Type of RAM | |
Developer | JEDEC |
---|---|
Type | Synchronous dynamic random-access memory |
Generation | 7th generation |
Predecessor | GDDR6 SDRAM |
Graphics Double Data Rate 7 Synchronous Dynamic Random-Access Memory (GDDR7 SDRAM) is a type of synchronous graphics random-access memory (SGRAM) specified by the JEDEC Semiconductor Memory Standard, with a high bandwidth, " double data rate" interface, designed for use in graphics cards, game consoles, and high-performance computing. It is a type of GDDR SDRAM (graphics DDR SDRAM), and is the successor to GDDR6.
GDDR7 SDRAM introduced PAM-3 signaling (3 level pulse-amplitude modulation) instead of NRZ. PAM-3 is 20% more energy-efficient than NRZ with a higher bandwidth and has lower equipment requirements than PAM-4, making it cheaper. PAM-3 is using 1.58 bits per cycle, while NRZ uses only 1 bit per cycle. [9] GDDR7 SDRAM also will be manufactured using 1ß node (equivalent to 12–10 nm process node), which will be the last DRAM production process that will rely on deep ultraviolet (DUV) lithography tools.