![]() | |
Names | |
---|---|
IUPAC name
Manganese arsenide
| |
Identifiers | |
3D model (
JSmol)
|
|
ChemSpider | |
ECHA InfoCard | 100.031.331 |
EC Number |
|
PubChem
CID
|
|
CompTox Dashboard (
EPA)
|
|
| |
| |
Properties | |
MnAs | |
Molar mass | 129.859 g/mol |
Structure [1] | |
Hexagonal (NiAs) | |
P63/mmc (No. 194), hP4 | |
a = 0.4 nm, c = 0.5702 nm
| |
Formula units (Z)
|
2 |
Hazards | |
Flash point | Non-flammable |
Related compounds | |
Other
anions
|
Manganese silicide |
Other
cations
|
Gallium arsenide Nickel arsenide |
Related compounds
|
Gallium manganese arsenide |
Except where otherwise noted, data are given for materials in their
standard state (at 25 °C [77 °F], 100 kPa).
|
Manganese arsenide (MnAs) is an intermetallic compound, an arsenide of manganese. It forms ferromagnetic crystals with hexagonal (NiAs-type) crystal structure, which convert to the paramagnetic orthorhombic β-phase upon heating to 45 °C (113 °F). MnAs has potential applications in spintronics, for electrical spin injection into GaAs and Si based devices. [2]
![]() | |
Names | |
---|---|
IUPAC name
Manganese arsenide
| |
Identifiers | |
3D model (
JSmol)
|
|
ChemSpider | |
ECHA InfoCard | 100.031.331 |
EC Number |
|
PubChem
CID
|
|
CompTox Dashboard (
EPA)
|
|
| |
| |
Properties | |
MnAs | |
Molar mass | 129.859 g/mol |
Structure [1] | |
Hexagonal (NiAs) | |
P63/mmc (No. 194), hP4 | |
a = 0.4 nm, c = 0.5702 nm
| |
Formula units (Z)
|
2 |
Hazards | |
Flash point | Non-flammable |
Related compounds | |
Other
anions
|
Manganese silicide |
Other
cations
|
Gallium arsenide Nickel arsenide |
Related compounds
|
Gallium manganese arsenide |
Except where otherwise noted, data are given for materials in their
standard state (at 25 °C [77 °F], 100 kPa).
|
Manganese arsenide (MnAs) is an intermetallic compound, an arsenide of manganese. It forms ferromagnetic crystals with hexagonal (NiAs-type) crystal structure, which convert to the paramagnetic orthorhombic β-phase upon heating to 45 °C (113 °F). MnAs has potential applications in spintronics, for electrical spin injection into GaAs and Si based devices. [2]