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From Wikipedia, the free encyclopedia

Michael Kneissl
Born1966 (age 57–58)
Alma mater University of Erlangen–Nuremberg
Known for
Awards IEEE Fellow
Scientific career
Fields Solid State Physics
Institutions

Michael Kneissl is a German physicist and professor at the Institute of Solid State Physics at Technische Universität Berlin.

Kneissl received his doctoral degree in physics from the University of Erlangen–Nuremberg in 1996. [1] During his graduate studies, he was also a visiting scholar at the University of California, Berkeley, in 1993. He joined the Xerox Palo Alto Research Center (PARC) in 1996. Since 2005, he has been a Full Professor and the Chair of Experimental Nanophysics and Photonics Group at the TU Berlin. [2] He holds a joint appointment at the Ferdinand-Braun-Institut in Berlin, where he heads the Joint Lab GaN- Optoelectronics. [3] Excluding a two-year hiatus in 2021 he has served as the Executive Director of the Institute of Solid State Physics at TU Berlin since 2011.

His research interests include group III-nitride semiconductor materials, metalorganic vapour-phase epitaxy of wide-bandgap semiconductors and ( In) AlGaN nanostructures as well as novel optoelectronic devices, including UV LEDs and laser diodes. [4] [5]

He was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2016 [6] for contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs. He holds more than 60 patents in the area of group III-nitride device technologies. [7]

Books

  • with Knorr, Andreas; Reitzenstein, Stephan; Hoffmann, Axel, eds. (2020). Semiconductor Nanophotonics. Springer Series in Solid-State Sciences. Vol. 194. Springer Cham. doi: 10.1007/978-3-030-35656-9. ISBN  978-3-030-35655-2. S2CID  242358782.
  • with Rass, Jens, ed. (2016). III-Nitride Ultraviolet Emitters. Springer Series in Materials Science. Vol. 227. Springer Cham. doi: 10.1007/978-3-319-24100-5. ISBN  978-3-319-24098-5. S2CID  138704361.

References

  1. ^ Elektroabsorption in Quantentopfstrukturen unter dem Einfluß schichtparalleler elektrischer Felder und deren Anwendung in elektrooptischen Modulatoren. Physik mikrostrukturierter Halbleiter (in German). German National Library. 1997. ISBN  9783932392030. Retrieved 28 May 2022.
  2. ^ "Personalia der TU Berlin" (in German). Informationsdienst Wissenschaft. Retrieved 21 November 2021.
  3. ^ "Joint Lab GaN Optoelectronics". Ferdinand-Braun-Institut. Retrieved 22 November 2021.
  4. ^ Schirber, Michael (31 August 2021). "Zapping Germs with LEDs". Physics. 14. American Physical Society: 120. Bibcode: 2021PhyOJ..14..120S. doi: 10.1103/Physics.14.120. S2CID  244180585. Retrieved 28 May 2022.
  5. ^ "Advances & Challenges for AlGaN-based UV-LED technologies" (PDF). United States Department of Energy. Retrieved 28 May 2022.
  6. ^ 2016 elevated fellow at the Wayback Machine (archived 2017-02-03)
  7. ^ "Patents by Inventor Michael Kneissl". Justia Inc. Retrieved 28 May 2022.

External links


From Wikipedia, the free encyclopedia

Michael Kneissl
Born1966 (age 57–58)
Alma mater University of Erlangen–Nuremberg
Known for
Awards IEEE Fellow
Scientific career
Fields Solid State Physics
Institutions

Michael Kneissl is a German physicist and professor at the Institute of Solid State Physics at Technische Universität Berlin.

Kneissl received his doctoral degree in physics from the University of Erlangen–Nuremberg in 1996. [1] During his graduate studies, he was also a visiting scholar at the University of California, Berkeley, in 1993. He joined the Xerox Palo Alto Research Center (PARC) in 1996. Since 2005, he has been a Full Professor and the Chair of Experimental Nanophysics and Photonics Group at the TU Berlin. [2] He holds a joint appointment at the Ferdinand-Braun-Institut in Berlin, where he heads the Joint Lab GaN- Optoelectronics. [3] Excluding a two-year hiatus in 2021 he has served as the Executive Director of the Institute of Solid State Physics at TU Berlin since 2011.

His research interests include group III-nitride semiconductor materials, metalorganic vapour-phase epitaxy of wide-bandgap semiconductors and ( In) AlGaN nanostructures as well as novel optoelectronic devices, including UV LEDs and laser diodes. [4] [5]

He was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2016 [6] for contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs. He holds more than 60 patents in the area of group III-nitride device technologies. [7]

Books

  • with Knorr, Andreas; Reitzenstein, Stephan; Hoffmann, Axel, eds. (2020). Semiconductor Nanophotonics. Springer Series in Solid-State Sciences. Vol. 194. Springer Cham. doi: 10.1007/978-3-030-35656-9. ISBN  978-3-030-35655-2. S2CID  242358782.
  • with Rass, Jens, ed. (2016). III-Nitride Ultraviolet Emitters. Springer Series in Materials Science. Vol. 227. Springer Cham. doi: 10.1007/978-3-319-24100-5. ISBN  978-3-319-24098-5. S2CID  138704361.

References

  1. ^ Elektroabsorption in Quantentopfstrukturen unter dem Einfluß schichtparalleler elektrischer Felder und deren Anwendung in elektrooptischen Modulatoren. Physik mikrostrukturierter Halbleiter (in German). German National Library. 1997. ISBN  9783932392030. Retrieved 28 May 2022.
  2. ^ "Personalia der TU Berlin" (in German). Informationsdienst Wissenschaft. Retrieved 21 November 2021.
  3. ^ "Joint Lab GaN Optoelectronics". Ferdinand-Braun-Institut. Retrieved 22 November 2021.
  4. ^ Schirber, Michael (31 August 2021). "Zapping Germs with LEDs". Physics. 14. American Physical Society: 120. Bibcode: 2021PhyOJ..14..120S. doi: 10.1103/Physics.14.120. S2CID  244180585. Retrieved 28 May 2022.
  5. ^ "Advances & Challenges for AlGaN-based UV-LED technologies" (PDF). United States Department of Energy. Retrieved 28 May 2022.
  6. ^ 2016 elevated fellow at the Wayback Machine (archived 2017-02-03)
  7. ^ "Patents by Inventor Michael Kneissl". Justia Inc. Retrieved 28 May 2022.

External links



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