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Michael Kneissl | |
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Born | 1966 (age 57–58) |
Alma mater | University of Erlangen–Nuremberg |
Known for | |
Awards | IEEE Fellow |
Scientific career | |
Fields | Solid State Physics |
Institutions |
Michael Kneissl is a German physicist and professor at the Institute of Solid State Physics at Technische Universität Berlin.
Kneissl received his doctoral degree in physics from the University of Erlangen–Nuremberg in 1996. [1] During his graduate studies, he was also a visiting scholar at the University of California, Berkeley, in 1993. He joined the Xerox Palo Alto Research Center (PARC) in 1996. Since 2005, he has been a Full Professor and the Chair of Experimental Nanophysics and Photonics Group at the TU Berlin. [2] He holds a joint appointment at the Ferdinand-Braun-Institut in Berlin, where he heads the Joint Lab GaN- Optoelectronics. [3] Excluding a two-year hiatus in 2021 he has served as the Executive Director of the Institute of Solid State Physics at TU Berlin since 2011.
His research interests include group III-nitride semiconductor materials, metalorganic vapour-phase epitaxy of wide-bandgap semiconductors and ( In) AlGaN nanostructures as well as novel optoelectronic devices, including UV LEDs and laser diodes. [4] [5]
He was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2016 [6] for contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs. He holds more than 60 patents in the area of group III-nitride device technologies. [7]
![]() | This article has multiple issues. Please help
improve it or discuss these issues on the
talk page. (
Learn how and when to remove these template messages)
|
Michael Kneissl | |
---|---|
Born | 1966 (age 57–58) |
Alma mater | University of Erlangen–Nuremberg |
Known for | |
Awards | IEEE Fellow |
Scientific career | |
Fields | Solid State Physics |
Institutions |
Michael Kneissl is a German physicist and professor at the Institute of Solid State Physics at Technische Universität Berlin.
Kneissl received his doctoral degree in physics from the University of Erlangen–Nuremberg in 1996. [1] During his graduate studies, he was also a visiting scholar at the University of California, Berkeley, in 1993. He joined the Xerox Palo Alto Research Center (PARC) in 1996. Since 2005, he has been a Full Professor and the Chair of Experimental Nanophysics and Photonics Group at the TU Berlin. [2] He holds a joint appointment at the Ferdinand-Braun-Institut in Berlin, where he heads the Joint Lab GaN- Optoelectronics. [3] Excluding a two-year hiatus in 2021 he has served as the Executive Director of the Institute of Solid State Physics at TU Berlin since 2011.
His research interests include group III-nitride semiconductor materials, metalorganic vapour-phase epitaxy of wide-bandgap semiconductors and ( In) AlGaN nanostructures as well as novel optoelectronic devices, including UV LEDs and laser diodes. [4] [5]
He was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2016 [6] for contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs. He holds more than 60 patents in the area of group III-nitride device technologies. [7]