Names | |
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Systematic IUPAC name
Magnesium selenide | |
Identifiers | |
3D model (
JSmol)
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ChemSpider | |
ECHA InfoCard | 100.013.820 |
EC Number |
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PubChem
CID
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UNII | |
CompTox Dashboard (
EPA)
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Properties | |
MgSe | |
Molar mass | 103.27 g/mol [1] |
Density | 4.21 g/cm3 (rock-salt)
[2] 3.32 g/cm3 (zincblende) [1] |
Melting point | 1,290 °C; 2,350 °F; 1,560 K [1] |
Band gap | 3.9 eV (rock-salt) (300 K) 4.0 eV (zincblende) (300 K) |
Structure | |
Rock-salt (cubic) Zincblende (cubic) Wurtzite (hexagonal) | |
Related compounds | |
Other
anions
|
Magnesium oxide Magnesium sulfide Magnesium telluride |
Other
cations
|
Cadmium selenide Mercury selenide Zinc selenide |
Related compounds
|
Magnesium zinc selenide Cadmium magnesium selenide |
Except where otherwise noted, data are given for materials in their
standard state (at 25 °C [77 °F], 100 kPa).
|
Magnesium selenide is an inorganic compound with the chemical formula MgSe. It contains magnesium and selenium in a 1:1 ratio. It belongs to the II-VI family of semiconductor compounds.
Three crystal structures for MgSe have been experimentally characterized. The rock-salt structure is considered to be the most stable crystal structure that has been observed in bulk samples of MgSe, and a cubic lattice constant of 0.55 nm was deduced for this structure. [2] Although attempts at preparing pure zincblende MgSe have been unsuccessful, [3] the lattice constant of zincblende MgSe has been extrapolated from epitaxial thin films of zincblende MgxZn1-xSySe1-x and MgxZn1-xSe grown on gallium arsenide, the latter of which was prepared with a high magnesium content (up to 95% Mg, i.e., Mg0.95Zn0.05Se). [3] [4] There is good agreement between these and other extrapolations that the lattice constant of pure zincblende MgSe is 0.59 nm. [1] [2] The wurtzite structure of MgSe has been observed, but it is unstable and slowly converts to the rock-salt structure. [5]
NiAs- and FeSi-type crystal structures of MgSe are predicted to form by subjecting the rock-salt crystal structure to extremely high pressures. [2]
Both rock-salt and zincblende MgSe are semiconductors. On the basis of different extrapolations, a room temperature bandgap of 4.0 eV has been recommended for zincblende MgSe. [1] [2] A room temperature bandgap of 3.9 eV was determined for rock-salt MgSe. [2] [3]
Thin films of amorphous, wurtzite and rock-salt MgSe have been prepared by vacuum deposition of Mg and Se at cryogenic temperatures, followed by heating and annealing. [5] Compound semiconductor alloys of MgSe, such as MgxZn1-xSe, have been prepared by molecular beam epitaxy. [3] [4]
Samples of pure MgSe and Mg-rich MgxZn1-xSe (x > 0.7) readily react with water and oxidize in air. [2] [3]
Names | |
---|---|
Systematic IUPAC name
Magnesium selenide | |
Identifiers | |
3D model (
JSmol)
|
|
ChemSpider | |
ECHA InfoCard | 100.013.820 |
EC Number |
|
PubChem
CID
|
|
UNII | |
CompTox Dashboard (
EPA)
|
|
| |
| |
Properties | |
MgSe | |
Molar mass | 103.27 g/mol [1] |
Density | 4.21 g/cm3 (rock-salt)
[2] 3.32 g/cm3 (zincblende) [1] |
Melting point | 1,290 °C; 2,350 °F; 1,560 K [1] |
Band gap | 3.9 eV (rock-salt) (300 K) 4.0 eV (zincblende) (300 K) |
Structure | |
Rock-salt (cubic) Zincblende (cubic) Wurtzite (hexagonal) | |
Related compounds | |
Other
anions
|
Magnesium oxide Magnesium sulfide Magnesium telluride |
Other
cations
|
Cadmium selenide Mercury selenide Zinc selenide |
Related compounds
|
Magnesium zinc selenide Cadmium magnesium selenide |
Except where otherwise noted, data are given for materials in their
standard state (at 25 °C [77 °F], 100 kPa).
|
Magnesium selenide is an inorganic compound with the chemical formula MgSe. It contains magnesium and selenium in a 1:1 ratio. It belongs to the II-VI family of semiconductor compounds.
Three crystal structures for MgSe have been experimentally characterized. The rock-salt structure is considered to be the most stable crystal structure that has been observed in bulk samples of MgSe, and a cubic lattice constant of 0.55 nm was deduced for this structure. [2] Although attempts at preparing pure zincblende MgSe have been unsuccessful, [3] the lattice constant of zincblende MgSe has been extrapolated from epitaxial thin films of zincblende MgxZn1-xSySe1-x and MgxZn1-xSe grown on gallium arsenide, the latter of which was prepared with a high magnesium content (up to 95% Mg, i.e., Mg0.95Zn0.05Se). [3] [4] There is good agreement between these and other extrapolations that the lattice constant of pure zincblende MgSe is 0.59 nm. [1] [2] The wurtzite structure of MgSe has been observed, but it is unstable and slowly converts to the rock-salt structure. [5]
NiAs- and FeSi-type crystal structures of MgSe are predicted to form by subjecting the rock-salt crystal structure to extremely high pressures. [2]
Both rock-salt and zincblende MgSe are semiconductors. On the basis of different extrapolations, a room temperature bandgap of 4.0 eV has been recommended for zincblende MgSe. [1] [2] A room temperature bandgap of 3.9 eV was determined for rock-salt MgSe. [2] [3]
Thin films of amorphous, wurtzite and rock-salt MgSe have been prepared by vacuum deposition of Mg and Se at cryogenic temperatures, followed by heating and annealing. [5] Compound semiconductor alloys of MgSe, such as MgxZn1-xSe, have been prepared by molecular beam epitaxy. [3] [4]
Samples of pure MgSe and Mg-rich MgxZn1-xSe (x > 0.7) readily react with water and oxidize in air. [2] [3]