LDMOS (laterally-diffused metal-oxide semiconductor)[1] is a planar double-diffused
MOSFET (metal–oxide–semiconductor field-effect transistor) used in
amplifiers, including
microwave power amplifiers,
RF power amplifiers and
audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1] As an example, the drift region of this
power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.
The
silicon-based RF LDMOS (
radio-frequency LDMOS) is the most widely used RF power amplifier in
mobile networks,[2][3][4] enabling the majority of the world's
cellular voice and
data traffic.[5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source
breakdown voltage usually above 60
volts.[6] Compared to other devices such as
GaAs FETs they show a lower maximum power gain frequency.
^van Rijs, F. (2008). "Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications". Radio and Wireless Symposium, 2008 IEEE. Orlando, FL. pp. 69–72.
doi:
10.1109/RWS.2008.4463430.
LDMOS (laterally-diffused metal-oxide semiconductor)[1] is a planar double-diffused
MOSFET (metal–oxide–semiconductor field-effect transistor) used in
amplifiers, including
microwave power amplifiers,
RF power amplifiers and
audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1] As an example, the drift region of this
power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.
The
silicon-based RF LDMOS (
radio-frequency LDMOS) is the most widely used RF power amplifier in
mobile networks,[2][3][4] enabling the majority of the world's
cellular voice and
data traffic.[5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source
breakdown voltage usually above 60
volts.[6] Compared to other devices such as
GaAs FETs they show a lower maximum power gain frequency.
^van Rijs, F. (2008). "Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications". Radio and Wireless Symposium, 2008 IEEE. Orlando, FL. pp. 69–72.
doi:
10.1109/RWS.2008.4463430.