Hisayo Sasaki Momose ( Japanese: 百瀬 寿代) is a Japanese electrical engineer specializing in semiconductor devices, including MOSFETs [1] and CMOS image sensors. [2] She is a researcher at the Toshiba Center for Semiconductor Research and Development in Kawasaki. [2]
Momose is originally from Gifu. She earned a master's degree in chemistry from Ochanomizu University in 1984, and began working for Toshiba in the same year. [1] In 2006 she earned a Ph.D. in electrical engineering from the Tokyo Institute of Technology. [2] [3]
Momose was named a Fellow of the IEEE in 2005, "for contributions to ultra-thin gate oxide metal oxide semiconductor field effect transistors". [4] She was named a Fellow of the Japan Society of Advanced Physics in 2009, for her "study on high performance Si CMOS devices". [5]
She was one of a group of Toshiba scientists who won the 2007 Yamazaki-Teiichi Prize, [3] and earned a commendation in 2009 from the Minister of Education, Culture, Sports, Science and Technology, for their work on MOSFET devices. [6]
Hisayo Sasaki Momose ( Japanese: 百瀬 寿代) is a Japanese electrical engineer specializing in semiconductor devices, including MOSFETs [1] and CMOS image sensors. [2] She is a researcher at the Toshiba Center for Semiconductor Research and Development in Kawasaki. [2]
Momose is originally from Gifu. She earned a master's degree in chemistry from Ochanomizu University in 1984, and began working for Toshiba in the same year. [1] In 2006 she earned a Ph.D. in electrical engineering from the Tokyo Institute of Technology. [2] [3]
Momose was named a Fellow of the IEEE in 2005, "for contributions to ultra-thin gate oxide metal oxide semiconductor field effect transistors". [4] She was named a Fellow of the Japan Society of Advanced Physics in 2009, for her "study on high performance Si CMOS devices". [5]
She was one of a group of Toshiba scientists who won the 2007 Yamazaki-Teiichi Prize, [3] and earned a commendation in 2009 from the Minister of Education, Culture, Sports, Science and Technology, for their work on MOSFET devices. [6]