Company type | Privately held |
---|---|
Industry | Semiconductors: memory |
Founded | 2010 |
Founder | George Minassian, Hagop Nazarian, Wei Lu |
Headquarters | |
Products | Semiconductor Memory Technology |
Number of employees | 20+ |
Crossbar is a company based in Santa Clara, California. [1] Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology. [2]
Crossbar was founded in 2010, by George Minassian, Hagop Nazarian, and Wei Lu. [1] [3] As part of the University of Michigan Tech Transfer program, in 2010, Crossbar licensed resistive RAM (RRAM) patents from the University of Michigan. [4] Crossbar filed patents relating to the development, commercialization and manufacturing of RRAM technology. [5]
In August 2013, Crossbar emerged from stealth mode and announced the development of a memory array at a commercial semiconductor device fabrication facility. It was said to deliver faster write performance; lower power consumption and more endurance at half the die size, compared to NAND flash memory. Since it is CMOS-compatible, it can be fabricated without special equipment or materials. [6]
Crossbar received $25 million in funding from Artiman Ventures, Kleiner Perkins Caufield and Byers, Northern Light Venture Capital and the Michigan Investment in New Technology Startups (MINTS) program in 2012. [7] Another funding round of about $35 million was announced in September 2015, with investors from China and Hong Kong. [8]
Crossbar primarily markets to original equipment manufacturers (OEMs) and system on a chip (SOC) developers of consumer, enterprise, mobile, industrial and Internet of things products. [9]
The company in 2013 announced its goal was a terabyte of storage on a single RRAM integrated circuit, compatible with standard CMOS semiconductor manufacturing processes, [10] with a prototype showcased the same year having the theoretical ability to achieve this on a 200mm2 chip. [11] [12] According to Crossbar, the chip uses a crosspoint array to stack multiple silver-ion-based memory layers on top of each other, with the prototype having three such layers. [13] [14]
Company type | Privately held |
---|---|
Industry | Semiconductors: memory |
Founded | 2010 |
Founder | George Minassian, Hagop Nazarian, Wei Lu |
Headquarters | |
Products | Semiconductor Memory Technology |
Number of employees | 20+ |
Crossbar is a company based in Santa Clara, California. [1] Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology. [2]
Crossbar was founded in 2010, by George Minassian, Hagop Nazarian, and Wei Lu. [1] [3] As part of the University of Michigan Tech Transfer program, in 2010, Crossbar licensed resistive RAM (RRAM) patents from the University of Michigan. [4] Crossbar filed patents relating to the development, commercialization and manufacturing of RRAM technology. [5]
In August 2013, Crossbar emerged from stealth mode and announced the development of a memory array at a commercial semiconductor device fabrication facility. It was said to deliver faster write performance; lower power consumption and more endurance at half the die size, compared to NAND flash memory. Since it is CMOS-compatible, it can be fabricated without special equipment or materials. [6]
Crossbar received $25 million in funding from Artiman Ventures, Kleiner Perkins Caufield and Byers, Northern Light Venture Capital and the Michigan Investment in New Technology Startups (MINTS) program in 2012. [7] Another funding round of about $35 million was announced in September 2015, with investors from China and Hong Kong. [8]
Crossbar primarily markets to original equipment manufacturers (OEMs) and system on a chip (SOC) developers of consumer, enterprise, mobile, industrial and Internet of things products. [9]
The company in 2013 announced its goal was a terabyte of storage on a single RRAM integrated circuit, compatible with standard CMOS semiconductor manufacturing processes, [10] with a prototype showcased the same year having the theoretical ability to achieve this on a 200mm2 chip. [11] [12] According to Crossbar, the chip uses a crosspoint array to stack multiple silver-ion-based memory layers on top of each other, with the prototype having three such layers. [13] [14]